IEC 62418 : 1.0
IEC 62418 : 1.0
SEMICONDUCTOR DEVICES - METALLIZATION STRESS VOID TEST
International Electrotechnical Committee
SEMICONDUCTOR DEVICES - METALLIZATION STRESS VOID TEST
International Electrotechnical Committee
FOREWORD
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation (resistance
change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration mechanism
Annex B (informative) - Technology-dependent factors for
aluminium
Annex C (informative) - Technology-dependent factors for
copper
Annex D (informative) - Precautions
Bibliography
Specifies a method of metallization stress void test and associated criteria.
Document Type | Standard |
Status | Current |
Publisher | International Electrotechnical Committee |
Committee | TC 47 |